標題: OXIDATION STUDY OF GE CONDENSATION ON SGOI NANOWIRE BIOSENSOR FABRICATION
作者: Chang, Kow-Ming
Chen, Chu-Feng
Lai, Chiung-Hui
Wu, Chin-Ning
Hsieh, Cheng-Ting
Wang, Yu-Bin
Liu, Chung-Hsien
Chang, Kuo-Chin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2013
摘要: The Ge condensation method is effective in increasing the Ge fraction of Ge in SGOI. Previous studies by the authors confirmed a correlation between the Ge fraction and the sensitivity of the SiGe nano-wire sensor. To understand how Ge condensation on an SGOI nano-wire sensor helps to optimize oxidation conditions and sensitivity, the effect of oxidizing gas and the SiGe/alpha-Si stacked structure on the movement of Ge is investigated. The analytical results reveal that the sensitivity of SiGe nano-wires can be optimized by stacking an Si1-xGex layer that contains 14% Ge on a 200 angstrom-thick alpha-Si layer and treating the stack with O-2 gas diluted by 13% N-2 for 3 min.
URI: http://dx.doi.org/10.1149/04514.0055ecst
http://hdl.handle.net/11536/150619
ISSN: 1938-5862
DOI: 10.1149/04514.0055ecst
期刊: SENSORS, ACTUATORS, AND MICROSYSTEMS (GENERAL) - 221ST ECS MEETING
Volume: 45
起始頁: 55
結束頁: 66
Appears in Collections:Conferences Paper