標題: Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation
作者: Chao, TS
Chang, TH
電子物理學系
Department of Electrophysics
公開日期: 1-Jan-2003
摘要: In this paper, we found the nitridation on the interpoly-oxide with NH3 and N2O processes can simultaneously improve the quality of both tunneling oxide and interpoly-oxide. Three types of poly-Si for floating gate are investigated. We found in-situ doped poly -Si shows the best performance in terms of breakdown filed, charge to breakdown (Q(BD)) and trapping rate The Q(BD) of interpoly-oxide can be reached as high as 35 C/cm(2). This scheme is very promising for nonvolatile memory devices.
URI: http://hdl.handle.net/11536/150625
期刊: 2003 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS
起始頁: 255
結束頁: 258
Appears in Collections:Conferences Paper