Photoluminescence From InN Nanorod Arrays with a Critical Size

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DC Field	Value	Language
dc.contributor.author	Chang, K. -Y.	en_US
dc.contributor.author	Liu, Y. -S.	en_US
dc.contributor.author	Gwo, S.	en_US
dc.contributor.author	Ahn, H.	en_US
dc.date.accessioned	2019-04-02T06:04:21Z	-
dc.date.available	2019-04-02T06:04:21Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150631	-
dc.description.abstract	Abnormal temperature dependence of peak energy and bandwidth of photoluminescence spectra was observed for InN nanorods with a diameter <30 nm, which is of the same order of the thickness of surface electron accumulation layer.	en_US
dc.language.iso	en_US	en_US
dc.title	Photoluminescence From InN Nanorod Arrays with a Critical Size	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000334176100470	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper