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dc.contributor.authorLai, Ming-Fangen_US
dc.contributor.authorLi, Shih-Weien_US
dc.contributor.authorShih, Jian-Yuen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2014-12-08T15:21:13Z-
dc.date.available2014-12-08T15:21:13Z-
dc.date.issued2011-11-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2011.05.036en_US
dc.identifier.urihttp://hdl.handle.net/11536/15065-
dc.description.abstractSchemes and key technologies of wafer-level three-dimensional integrated circuits (3D IC) are reviewed and introduced in this paper. Direction of wafer stacking, methods of wafer bonding, fabrication of through-silicon via (TSV), and classification of wafer type are options for 3D IC schemes. Key technologies, such as alignment. Cu bonding, and TSV fabrication, are described as well. Better performance, lower cost, and more functionality of future electronic products become feasible with 3D IC concept application. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectThree-dimensional integrated circuits (3D IC)en_US
dc.subjectThrough-silicon via (TSV)en_US
dc.subjectWafer bondingen_US
dc.titleWafer-level three-dimensional integrated circuits (3D IC): Schemes and key technologiesen_US
dc.typeReviewen_US
dc.identifier.doi10.1016/j.mee.2011.05.036en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume88en_US
dc.citation.issue11en_US
dc.citation.spage3282en_US
dc.citation.epage3286en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000298461700018-
dc.citation.woscount4-
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