Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lai, Ming-Fang | en_US |
dc.contributor.author | Li, Shih-Wei | en_US |
dc.contributor.author | Shih, Jian-Yu | en_US |
dc.contributor.author | Chen, Kuan-Neng | en_US |
dc.date.accessioned | 2014-12-08T15:21:13Z | - |
dc.date.available | 2014-12-08T15:21:13Z | - |
dc.date.issued | 2011-11-01 | en_US |
dc.identifier.issn | 0167-9317 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.mee.2011.05.036 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/15065 | - |
dc.description.abstract | Schemes and key technologies of wafer-level three-dimensional integrated circuits (3D IC) are reviewed and introduced in this paper. Direction of wafer stacking, methods of wafer bonding, fabrication of through-silicon via (TSV), and classification of wafer type are options for 3D IC schemes. Key technologies, such as alignment. Cu bonding, and TSV fabrication, are described as well. Better performance, lower cost, and more functionality of future electronic products become feasible with 3D IC concept application. (C) 2011 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Three-dimensional integrated circuits (3D IC) | en_US |
dc.subject | Through-silicon via (TSV) | en_US |
dc.subject | Wafer bonding | en_US |
dc.title | Wafer-level three-dimensional integrated circuits (3D IC): Schemes and key technologies | en_US |
dc.type | Review | en_US |
dc.identifier.doi | 10.1016/j.mee.2011.05.036 | en_US |
dc.identifier.journal | MICROELECTRONIC ENGINEERING | en_US |
dc.citation.volume | 88 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.spage | 3282 | en_US |
dc.citation.epage | 3286 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000298461700018 | - |
dc.citation.woscount | 4 | - |
Appears in Collections: | Articles |
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