標題: The development of low-temperature atomic layer deposition of HfO2 for TEM sample preparation on soft photo-resist substrate
作者: Peng, Kang-Ping
Liu, Ya-Chi
Lin, I-Feng
Lin, Chih-Chien
Huang, Shu-Wei
Ting, Chao-Cheng
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Low-temperature atomic layer deposition;Hafnium dioxide;Soft photo-resist;TEM sample preparation;Step coverage
公開日期: 1-Jan-2018
摘要: In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40 degrees C to 85 degrees C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.
URI: http://hdl.handle.net/11536/150739
ISSN: 1946-1550
期刊: 2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)
Appears in Collections:Conferences Paper