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dc.contributor.authorYu, Jue-Chinen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorChao, Hsueh-Yungen_US
dc.date.accessioned2014-12-08T15:21:14Z-
dc.date.available2014-12-08T15:21:14Z-
dc.date.issued2011-10-01en_US
dc.identifier.issn1932-5150en_US
dc.identifier.urihttp://dx.doi.org/10.1117/1.3663249en_US
dc.identifier.urihttp://hdl.handle.net/11536/15075-
dc.description.abstractThe generation of subresolution assist features (SRAFs) using inverse-lithography techniques demands extensive computational resources which limits its deployment in advanced CMOS nodes. In this paper, we propose a wavefront-based pixel inversion algorithm to quickly obtain inverse masks with a high aerial image quality. Further assisted by a flexible pattern simplification technique, we present effective SRAF generation and placement based on the calculated inverse mask. The proposed approach can be easily inserted prior to a conventional mask correction flow for subsequent concurrent optimizations of both drawn patterns and SRAFs. The innovative pixel inversion and pattern simplification techniques allow quality mask corrections as produced by inverse lithography while maintaining the convenience of standardized/validated process flows currently used in the industry. (C) 2011 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI:10.1117/1.3663249]en_US
dc.language.isoen_USen_US
dc.subjectoptical proximity correctionen_US
dc.subjectinverse lithographyen_US
dc.subjectsubresolution assist featuresen_US
dc.titleWavefront-based pixel inversion algorithm for generation of subresolution assist featuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/1.3663249en_US
dc.identifier.journalJOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMSen_US
dc.citation.volume10en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000298373900016-
dc.citation.woscount1-
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