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dc.contributor.authorWang, Z. R.en_US
dc.contributor.authorLi, Y.en_US
dc.contributor.authorSu, Y. T.en_US
dc.contributor.authorZhou, Y. X.en_US
dc.contributor.authorYin, K. S.en_US
dc.contributor.authorCheng, L.en_US
dc.contributor.authorChang, T. C.en_US
dc.contributor.authorXue, K. H.en_US
dc.contributor.authorSze, S. M.en_US
dc.contributor.authorMiao, X. S.en_US
dc.date.accessioned2019-04-02T06:04:53Z-
dc.date.available2019-04-02T06:04:53Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2330-7978en_US
dc.identifier.urihttp://hdl.handle.net/11536/150787-
dc.description.abstractRRAM is a promising candidate to construct in-memory computing architecture which can break through the von Neumann bottleneck. Taking advantage of the CMOS compatible 1T1R RRAM, functionally complete Boolean logics can be realized within two steps in a single unit that can suppress sneak pass problem and avoid cascading problem partially. In addition, an 8-bit pre-calculation adder with low computation complexity is designed and demonstrated experimentally to verify the feasibility and efficiency of 1T1R based in-memory computing architecture, which is applicable to future energy-efficient information processing systems.en_US
dc.language.isoen_USen_US
dc.subjectIn-memory computingen_US
dc.subjectRRAMen_US
dc.subjectFunctionally complete Boolean logicen_US
dc.subject8-bit adderen_US
dc.titleImplementation of Functionally Complete Boolean Logic and 8-bit Adder in CMOS Compatible 1T1R RRAMs for In-Memory Computingen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW)en_US
dc.citation.spage62en_US
dc.citation.epage65en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000448849300015en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper