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dc.contributor.authorWu, Yi-Chunen_US
dc.contributor.authorHuang, Po-Tsangen_US
dc.contributor.authorWu, Shang-Linen_US
dc.contributor.authorLung, Sheng-Chien_US
dc.contributor.authorWang, Wei-Changen_US
dc.contributor.authorHwang, Weien_US
dc.contributor.authorChuang, Ching-Teen_US
dc.date.accessioned2019-04-02T06:04:51Z-
dc.date.available2019-04-02T06:04:51Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2474-2724en_US
dc.identifier.urihttp://hdl.handle.net/11536/150806-
dc.description.abstractFor an energy-limited multi-sensing platform, ultra-low-power queueing design is one of the critical challenge to store low-speed sensing data with various sampling frequencies. In this paper, a near/sub-threshold dual-port first-in-first-out (FIFO) memory is proposed for shared queues in a unified queuing architecture. This ultra-lowpower FIFO memory is designed and implemented using bitinterleaved 12T near-/sub-threshold dual-port SRAM bit-cells, write/read-assist circuitries, and adaptive timing tracking circuits. The 12T bit-cell eliminates both read and write half-select disturbance. Additionally, an adaptive timing tracing circuitry and negative bit-line circuits are employed to against PVT variation and to enhance write ability, respectively. Furthermore, the self-timed pointers and short ripple bit-lines are designed to avoid global long metal lines with large loading. A 256x16 dual-port FIFO memory is implemented in UMC 28nm HKMG CMOS technology. This FIFO memory can be operated at 0.4V with 10MHz for read operations. Moreover, up to 60% power reduction can be achieved based on the proposed design techniques.en_US
dc.language.isoen_USen_US
dc.title28nm Near/Sub-Threshold Dual-Port FIFO Memory for Shared Queues in Multi-Sensor Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000450113800032en_US
dc.citation.woscount0en_US
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