完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, Yi-Chun | en_US |
dc.contributor.author | Huang, Po-Tsang | en_US |
dc.contributor.author | Wu, Shang-Lin | en_US |
dc.contributor.author | Lung, Sheng-Chi | en_US |
dc.contributor.author | Wang, Wei-Chang | en_US |
dc.contributor.author | Hwang, Wei | en_US |
dc.contributor.author | Chuang, Ching-Te | en_US |
dc.date.accessioned | 2019-04-02T06:04:51Z | - |
dc.date.available | 2019-04-02T06:04:51Z | - |
dc.date.issued | 2018-01-01 | en_US |
dc.identifier.issn | 2474-2724 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150806 | - |
dc.description.abstract | For an energy-limited multi-sensing platform, ultra-low-power queueing design is one of the critical challenge to store low-speed sensing data with various sampling frequencies. In this paper, a near/sub-threshold dual-port first-in-first-out (FIFO) memory is proposed for shared queues in a unified queuing architecture. This ultra-lowpower FIFO memory is designed and implemented using bitinterleaved 12T near-/sub-threshold dual-port SRAM bit-cells, write/read-assist circuitries, and adaptive timing tracking circuits. The 12T bit-cell eliminates both read and write half-select disturbance. Additionally, an adaptive timing tracing circuitry and negative bit-line circuits are employed to against PVT variation and to enhance write ability, respectively. Furthermore, the self-timed pointers and short ripple bit-lines are designed to avoid global long metal lines with large loading. A 256x16 dual-port FIFO memory is implemented in UMC 28nm HKMG CMOS technology. This FIFO memory can be operated at 0.4V with 10MHz for read operations. Moreover, up to 60% power reduction can be achieved based on the proposed design techniques. | en_US |
dc.language.iso | en_US | en_US |
dc.title | 28nm Near/Sub-Threshold Dual-Port FIFO Memory for Shared Queues in Multi-Sensor Applications | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2018 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT) | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 國際半導體學院 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | International College of Semiconductor Technology | en_US |
dc.identifier.wosnumber | WOS:000450113800032 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |