標題: A highly Integrated SiGeBiCMOS Class F Power Amplifier for Bluetooth Application
作者: Chen, Jia-Liang
Chiu, Tang-Jung
Jou, Christina F.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2006
摘要: A highly integrated 2.4-GHz Class F power amplifier using TSMC 0.35 mu m 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier.
URI: http://hdl.handle.net/11536/150836
期刊: 2006 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PAPERS
起始頁: 277
Appears in Collections:Conferences Paper