完整後設資料紀錄
DC 欄位語言
dc.contributor.authorKakkerla, Ramesh Kumaren_US
dc.contributor.authorHsiao, Chih-Jenen_US
dc.contributor.authorAnandan, Deepaken_US
dc.contributor.authorSingh, Sankalp Kumaren_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2019-04-02T06:04:29Z-
dc.date.available2019-04-02T06:04:29Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn2378-377Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/150875-
dc.description.abstractWe demonstrate the self-catalyst (SC) growth of vertically aligned InAs and InAs/GaSb heterostructure nanowires on Si(111) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on morphology and growth rate for SC InAs and InAs/GaSb heterostructure nanowires (NWs) were investigated. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the SC InAs NW core at certain growth temperatures. Crystal structure of InAs/GaSb heterostructure nanowires was also discussed. These results show that the control over SC InAs NWs growth, the GaSb shell thickness and it's crystal quality was achieved which is essential for future nano electronic devices such as TFET.en_US
dc.language.isoen_USen_US
dc.titleGrowth and Crystal Structure Investigation of Self-catalyst InAs/GaSb Heterostructure Nanowires on Si substrateen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC)en_US
dc.citation.spage133en_US
dc.citation.epage134en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000452139200051en_US
dc.citation.woscount0en_US
顯示於類別:會議論文