標題: Very low noise in 90nm node RF MOSFETs using a new layout
作者: Kao, H. L.
Chin, Albert
Liao, C. C.
McAlister, S. P.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RF noise;f(T);associated gain;MOSFET
公開日期: 1-Jan-2007
摘要: We have directly measured a record low minimum noise figure (NFmin) of 0.46 dB at 10 GM, along with a high 16.6 dB Associated Gain, in an 8-finger 90 nm node MOSFET (L-G = 65nm) without de-embedding. At 18 GHz, NFmin was 0.83 dB with 13.5 dB gain. This was achieved using a microstrip line layout to screen the RF noise generated by the lossy substrate.
URI: http://dx.doi.org/10.1109/SMIC.2007.322765
http://hdl.handle.net/11536/150924
DOI: 10.1109/SMIC.2007.322765
期刊: 2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS
起始頁: 44
Appears in Collections:Conferences Paper