標題: Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium Oxides
作者: Liu, Chien
Fan, Chia-Chi
Tseng, Chih-Yang
Hsu, Hsiao-Hsuan
Cheng, Chun-Hu
Chen, Yen-Liang
Chang, Chun-Yen
Chou, Wu-Ching
Lin, Chien-Liang
Fan, Yu-Chi
Lee, Tsung-Ming
光電系統研究所
電子物理學系
電子工程學系及電子研究所
Institute of Photonic System
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2018
摘要: In this work, we investigated ferroelectric and antiferroelectric effects in ferroelectric HfAIO capacitor with various aluminum doping concentrations. With the increase of aluminum doping concentration, the transition from ferroelectric to weak anti-ferroelectric properties can be observed by measuring polarization hysteresis and transient current response. The experimental results prove that the aluminum doping concentration of HfAIO material not only affects the ferroelectric-antiferroelectric transition, but also determine the leakage issue during domain switching.
URI: http://hdl.handle.net/11536/151073
期刊: 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
起始頁: 407
結束頁: 409
Appears in Collections:Conferences Paper