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dc.contributor.authorLi, Kai-Shinen_US
dc.contributor.authorWei, Yun-Jieen_US
dc.contributor.authorChen, Yi-Juen_US
dc.contributor.authorChiu, Wen-Chengen_US
dc.contributor.authorChen, Hsiu-Chihen_US
dc.contributor.authorLee, Min-Hungen_US
dc.contributor.authorChiu, Yu-Fanen_US
dc.contributor.authorHsueh, Fu-Kuoen_US
dc.contributor.authorWu, Bo-Weien_US
dc.contributor.authorChen, Pin-Guangen_US
dc.contributor.authorLai, Tung-Yanen_US
dc.contributor.authorChen, Chun-Chien_US
dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorYeh, Wen-Kuanen_US
dc.contributor.authorSalahuddin, Sayeefen_US
dc.contributor.authorHu, Chenmingen_US
dc.date.accessioned2019-04-02T06:04:37Z-
dc.date.available2019-04-02T06:04:37Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2380-9248en_US
dc.identifier.urihttp://hdl.handle.net/11536/151100-
dc.description.abstractIn this work, we use thermal-ALD to prepare ferroelectric HfZrO2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I-D. Lower thermal budget process, CO2 far-infrared laser activation and 400 degrees C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F-t) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.en_US
dc.language.isoen_USen_US
dc.titleNegative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ften_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000459882300042en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper