| 標題: | CHARACTERIZATION AND SIMULATION OF HOT CARRIER EFFECT ON ERASING GATE CURRENT IN FLASH EEPROMS |
| 作者: | HUANG, CM WANG, TH CHEN, T PENG, NC CHANG, A SHONE, FC 交大名義發表 National Chiao Tung University |
| 公開日期: | 1-一月-1995 |
| URI: | http://hdl.handle.net/11536/151140 |
| 期刊: | 1995 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 33RD ANNUAL |
| 起始頁: | 61 |
| 結束頁: | 64 |
| 顯示於類別： | 會議論文 |
- A SIMPLE AND ACCURATE SIMULATION TECHNIQUE FOR FLASH EEPROM WRITING AND ITS RELIABILITY ISSUE / WEN, KS;WU, CY
- A new technique for hot carrier reliability evaluations of flash memory cell after long-term program/erase cycles / Chung, SS;Yih, CM;Cheng, SM;Liang, MS
- An endurance evaluation method for flash EEPROM / Zous, NK;Chen, YJ;Chin, CY;Tsai, WJ;Lu, TC
- 新的二維熱載模擬技術及在次微米金氧半場效電晶體和快閃記憶體分析上的應用 / 溫□珊;Wen, Kuei-Shan;吳慶源;Wu, Ching-Yuan
- A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programming / Tsai, WJ;Zous, NK;Wang, TH;Ku, YHJ;Lu, CY
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