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dc.contributor.authorYeh, Chi-Yien_US
dc.contributor.authorChen, Hung-Mingen_US
dc.contributor.authorHuang, Li-Daen_US
dc.contributor.authorWei, Wei-Tingen_US
dc.contributor.authorLu, Chao-Hungen_US
dc.contributor.authorLiu, Chien-Nanen_US
dc.date.accessioned2019-04-02T06:04:43Z-
dc.date.available2019-04-02T06:04:43Z-
dc.date.issued2007-01-01en_US
dc.identifier.issn2164-1676en_US
dc.identifier.urihttp://hdl.handle.net/11536/151155-
dc.description.abstractLow power demand drives the development of lower power design architectures, among which power gating is one of the state-of-the-art techniques to achieve low power. NITCMOS (or sleep transistor) is applied when some of the blocks can be switched off without leakage power dissipation. This technique is widely used in circuit level design, but hardly used in higher level design stage. Due to early planning in power delivery for area-array design style, it is necessary to consider the power gating techniques in early SoC physical design stage. This paper presents a framework to insert coarse grain MTCMOS in SoC floorplanning stage, saving mainly leakage power. This work decides which modules have chance to save power by sleep transistors insertion, and reserves enough area for them during floorplarming. The results show that our approach works well and can obtain lower power floorplans with supply noise aware sleep transistor insertion in area-array architecture.en_US
dc.language.isoen_USen_US
dc.titleUsing power gating techniques in area-array SoC floorplan designen_US
dc.typeProceedings Paperen_US
dc.identifier.journal20TH ANNIVERSARY IEEE INTERNATIONAL SOC CONFERENCE, PROCEEDINGSen_US
dc.citation.spage233en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000257572200053en_US
dc.citation.woscount1en_US
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