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dc.contributor.authorYen, Kuo-Hsien_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorKo, Chueh-Pingen_US
dc.contributor.authorLiu, Pu-Kuanen_US
dc.contributor.authorChang, Tzu-Yuehen_US
dc.contributor.authorSu, Kuo-Haien_US
dc.contributor.authorWei, Chiung-Shengen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorChen, Chien-Hsunen_US
dc.contributor.authorYeh, Chun-Mingen_US
dc.contributor.authorHwang, Jennchangen_US
dc.date.accessioned2019-04-02T06:04:43Z-
dc.date.available2019-04-02T06:04:43Z-
dc.date.issued2005-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/151158-
dc.description.abstractWe firstly fabricated the organic thin-film transistors with sputtered-AlN film as the gate insulator. The AlN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5x10(-4) cm(2)/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.en_US
dc.language.isoen_USen_US
dc.titleOrganic thin-film transistors with AIN film as a gate-insulator by RFIICP sputteringen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE TWENTY-FIFTH INTERNATIONAL DISPLAY RESEARCH CONFERENCE - EURODISPLAY 2005en_US
dc.citation.spage56en_US
dc.citation.epage58en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000258328800013en_US
dc.citation.woscount2en_US
Appears in Collections:Conferences Paper


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