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dc.contributor.authorChun-Yen Changen_US
dc.contributor.authorShiang-Shiou Yenen_US
dc.contributor.authorShao-Chin Changen_US
dc.contributor.authorChe-Wei Chiangen_US
dc.date.accessioned2019-04-11T05:42:37Z-
dc.date.available2019-04-11T05:42:37Z-
dc.date.issued2017-03-16en_US
dc.identifier.govdocH01L027/02en_US
dc.identifier.govdocH01L029/74en_US
dc.identifier.urihttp://hdl.handle.net/11536/151261-
dc.description.abstractA silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.en_US
dc.language.isoen_USen_US
dc.titleSILICON-CONTROLLED RECTIFIER AND AN ESD CLAMP CIRCUITen_US
dc.typePatentsen_US
dc.citation.patentcountryUSAen_US
dc.citation.patentnumber20170077080en_US
Appears in Collections:Patents


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