標題: | Quad-SCR Device for Cross-Domain ESD Protection |
作者: | Altolaguirre, Federico A. Ker, Ming-Dou 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Electrostatic discharge (ESD);separated power domains;silicon controlled rectifier (SCR) |
公開日期: | 八月-2016 |
摘要: | A new electrostatic discharge (ESD) protection device, called quad-silicon controlled rectifier (QSCR), is proposed and verified in a 0.25-mu m CMOS process. The QSCR is designed to be used as ESD protection between separated power domains. Since the QSCR embeds four SCRs between its four terminals, no extra ESD clamps are needed to protect the interface circuits between two separated power domains. Implementations with different circuit topologies were also analyzed to achieve a comprehensive ESD protection design for different applications. From the experimental results, the QSCR can withstand 8-kV HBM and 600-V MM ESD stresses with a silicon area of 75 mu m x 100 mu m. |
URI: | http://dx.doi.org/10.1109/TED.2016.2579170 http://hdl.handle.net/11536/134121 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2016.2579170 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 63 |
Issue: | 8 |
起始頁: | 3177 |
結束頁: | 3184 |
顯示於類別: | 期刊論文 |