標題: Quad-SCR Device for Cross-Domain ESD Protection
作者: Altolaguirre, Federico A.
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrostatic discharge (ESD);separated power domains;silicon controlled rectifier (SCR)
公開日期: 八月-2016
摘要: A new electrostatic discharge (ESD) protection device, called quad-silicon controlled rectifier (QSCR), is proposed and verified in a 0.25-mu m CMOS process. The QSCR is designed to be used as ESD protection between separated power domains. Since the QSCR embeds four SCRs between its four terminals, no extra ESD clamps are needed to protect the interface circuits between two separated power domains. Implementations with different circuit topologies were also analyzed to achieve a comprehensive ESD protection design for different applications. From the experimental results, the QSCR can withstand 8-kV HBM and 600-V MM ESD stresses with a silicon area of 75 mu m x 100 mu m.
URI: http://dx.doi.org/10.1109/TED.2016.2579170
http://hdl.handle.net/11536/134121
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2579170
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 63
Issue: 8
起始頁: 3177
結束頁: 3184
顯示於類別:期刊論文