標題: | ESD Protection Design With Diode-Triggered Quad-SCR for Separated Power Domains |
作者: | Chen, Jie-Ting Ker, Ming-Dou 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Electrostatic discharge (ESD);ESD protection;separated power domains;silicon-controlled rectifier (SCR) |
公開日期: | 1-六月-2019 |
摘要: | To effectively protect the interface circuit between separated power domains from electrostatic discharge (ESD) damage, a new diode-triggered quad-silicon-controlled rectifier (DTQSCR) is proposed and realized in a 0.18-mu m 1.8-V/3.3-V CMOS process. Since the DTQSCR embeds four silicon-controlled rectifier paths and a structure of back-to-back diodes, the silicon area can be efficiently reduced more than 30% as compared to the traditional ESD protection design under the same ESD specification. From the measurement results in silicon chip, an interface circuit (level shifter) with the proposed ESD protection design can successfully sustain a human-body-model of greater than 5.5 kV. The proposed ESD protection device is suitable to protect the interface circuits between different power domains. |
URI: | http://dx.doi.org/10.1109/TDMR.2019.2903209 http://hdl.handle.net/11536/152301 |
ISSN: | 1530-4388 |
DOI: | 10.1109/TDMR.2019.2903209 |
期刊: | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY |
Volume: | 19 |
Issue: | 2 |
起始頁: | 283 |
結束頁: | 289 |
顯示於類別: | 期刊論文 |