標題: ESD Protection Design With Diode-Triggered Quad-SCR for Separated Power Domains
作者: Chen, Jie-Ting
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrostatic discharge (ESD);ESD protection;separated power domains;silicon-controlled rectifier (SCR)
公開日期: 1-六月-2019
摘要: To effectively protect the interface circuit between separated power domains from electrostatic discharge (ESD) damage, a new diode-triggered quad-silicon-controlled rectifier (DTQSCR) is proposed and realized in a 0.18-mu m 1.8-V/3.3-V CMOS process. Since the DTQSCR embeds four silicon-controlled rectifier paths and a structure of back-to-back diodes, the silicon area can be efficiently reduced more than 30% as compared to the traditional ESD protection design under the same ESD specification. From the measurement results in silicon chip, an interface circuit (level shifter) with the proposed ESD protection design can successfully sustain a human-body-model of greater than 5.5 kV. The proposed ESD protection device is suitable to protect the interface circuits between different power domains.
URI: http://dx.doi.org/10.1109/TDMR.2019.2903209
http://hdl.handle.net/11536/152301
ISSN: 1530-4388
DOI: 10.1109/TDMR.2019.2903209
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 19
Issue: 2
起始頁: 283
結束頁: 289
顯示於類別:期刊論文