SILICON-CONTROLLED RECTIFIER AND AN ESD CLAMP CIRCUIT

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chun-Yen Chang	en_US
dc.contributor.author	Shiang-Shiou Yen	en_US
dc.contributor.author	Shao-Chin Chang	en_US
dc.contributor.author	Che-Wei Chiang	en_US
dc.date.accessioned	2019-04-11T05:42:37Z	-
dc.date.available	2019-04-11T05:42:37Z	-
dc.date.issued	2017-03-16	en_US
dc.identifier.govdoc	H01L027/02	en_US
dc.identifier.govdoc	H01L029/74	en_US
dc.identifier.uri	http://hdl.handle.net/11536/151261	-
dc.description.abstract	A silicon-controlled rectifier (SCR) includes a first-type field, a second-type first field and a second-type second field disconnectedly formed in a first-type well; an entire first-type doped region formed within the first-type field; a segmented second-type doped region formed within the second-type first field; and a segmented first-type doped region formed within the second-type second field.	en_US
dc.language.iso	en_US	en_US
dc.title	SILICON-CONTROLLED RECTIFIER AND AN ESD CLAMP CIRCUIT	en_US
dc.type	Patents	en_US
dc.citation.patentcountry	USA	en_US
dc.citation.patentnumber	20170077080	en_US
顯示於類別：	專利資料

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