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dc.contributor.authorChao-Hsin CHIENen_US
dc.contributor.authorChi-Wen LIUen_US
dc.contributor.authorChung-Chun HSUen_US
dc.contributor.authorWei-Chun CHIen_US
dc.date.accessioned2019-04-11T06:05:30Z-
dc.date.available2019-04-11T06:05:30Z-
dc.date.issued2018-03-01en_US
dc.identifier.govdocH01L021/24en_US
dc.identifier.govdocH01L021/285en_US
dc.identifier.govdocH01L029/47en_US
dc.identifier.govdocH01L029/872en_US
dc.identifier.govdocH01L029/66en_US
dc.identifier.urihttp://hdl.handle.net/11536/151419-
dc.description.abstractA method of manufacturing a semiconductor device includes forming a first metal layer on a semiconductor substrate and forming a second metal layer on the first metal layer. The second metal layer is formed of a different metal than the first metal layer. Microwave radiation is applied to the semiconductor substrate, first metal layer, and second metal layer to form an alloy comprising components of the first metal layer, second metal layer, and the semiconductor substrate.en_US
dc.language.isoen_USen_US
dc.titleMETHOD OF MANUFACTURING A SEMICONDUCTOR DEVICEen_US
dc.typePatentsen_US
dc.citation.patentcountryUSAen_US
dc.citation.patentnumber20180061642en_US
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