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dc.contributor.author張翼zh_TW
dc.contributor.author劉世謙zh_TW
dc.contributor.author黃崇愷zh_TW
dc.contributor.author吳佳勳zh_TW
dc.contributor.author韓秉承zh_TW
dc.contributor.author林岳欽zh_TW
dc.contributor.author謝廷恩zh_TW
dc.date.accessioned2019-04-11T06:20:31Z-
dc.date.available2019-04-11T06:20:31Z-
dc.date.issued2018-07-01en_US
dc.identifier.govdocH01L029/12en_US
dc.identifier.govdocH01L029/06en_US
dc.identifier.govdocH01L029/772en_US
dc.identifier.govdocH01L021/8252en_US
dc.identifier.urihttp://hdl.handle.net/11536/151477-
dc.description.abstract一種半導體裝置,包含:基材、通道層、阻障層、凹槽、電荷陷阱層、鐵電材料、閘極、源極和汲極。通道層配置於基材上;阻障層配置於通道層上,阻障層具有凹槽,且凹槽下方之阻障層具有一厚度;汲極和源極配置於阻障層上;電荷陷阱層覆蓋凹槽的底面;鐵電材料配置於電荷陷阱層上;以及閘極配置於鐵電材料上。zh_TW
dc.language.isozh_TWen_US
dc.title半導體裝置及其製造方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNen_US
dc.citation.patentnumber201824542en_US
Appears in Collections:Patents


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