CHEMICAL VAPOR PHASE GROWTH APPARATUS

Abstract

A chemical vapor phase growth apparatus for growing films on substrates comprises of a thermostated lower heating element, including a plurality of carrier disks thereon, wherein each carrier disk further includes a plurality of substrates thereon for film deposition; a plurality of partitions, disposed above the lower heating element to define a plurality of sub-reaction chambers; a plurality of upper heating elements made of a plurality of thermostated upper heating units, disposed over the lower heating element by a gap to form reaction zones in each sub-reaction chamber; a gas inlet installed in each sub-reaction chamber to provide at least one precursor into the sub-reaction chamber; and a gas outlet installed in the chemical vapor phase growth apparatus to exhaust the gases.