標題: | Chirped multilayer quantum-dot mode-locked lasers with dual-wavelength and ground-state lasing emissions |
作者: | Chen, Yu-Chen Hsieh, Pin-Hsien Lin, Gray 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | quantum dots;mode-locked lasers;semiconductor lasers;molecular beam epitaxy;dual-wavelength lasers |
公開日期: | 1-Jan-2019 |
摘要: | Monolithic passively mode-locked lasers are investigated based on chirped multi-layer InAs/InGaAs quantum-dot (QD) structure. The forward and backward tracings of light-current characteristics show two kinks and two hysteresis loops. The optical spectra reveal two lasing wavelengths around 1273 and 1230 nm, which are identified as two ground-state emissions of two differently chirped QD layers. The corresponding radio-frequency (RF) spectra of high-speed detector reveal two RF peaks at 16.21 and 16.03 GHz, which are attributed to fundamental mode-locking of two respective wavelengths. The laser pulses are confirmed by optical autocorrelator to exhibit dual-wavelength mode-locking. The pulsed characteristics of two lasing wavelengths are also discussed in terms of operating conditions. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) |
URI: | http://dx.doi.org/10.1117/1.JNP.13.016001 http://hdl.handle.net/11536/151690 |
ISSN: | 1934-2608 |
DOI: | 10.1117/1.JNP.13.016001 |
期刊: | JOURNAL OF NANOPHOTONICS |
Volume: | 13 |
Issue: | 1 |
起始頁: | 0 |
結束頁: | 0 |
Appears in Collections: | Articles |