標題: Composite metal substrate for thin film AlGaInP LED applications
作者: Horng, R. H.
Sinha, Shreekant
Lee, C. P.
Feng, H. A.
Chung, C. Y.
Tu, C. W.
交大名義發表
電子工程學系及電子研究所
光電工程學系
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 15-Apr-2019
摘要: The fabrication and feasibility assessment of n-side up, thin-epilayer, AlGaInPbased vertical light-emitting-diodes (LEDs; emitting area: 1 mm x 1 mm) with a copperinvar-copper-composite metal (CIC) substrate was obtained by wafer bonding and epilayer transferring technologies. The structure of CIC substrate is a top Cu layer of 20 mu m, a middle Invar layer of 64 mu m, and a bottom Cu layer of 20 mu m. The invar layer consists of Fe and Ni at a ratio of 70% to 30%. The coefficient of thermal expansion for CIC is about 6.1 x 10(-6) /K, which is similar to that of the GaAs substrate (5.7 x 10(-6)/K) and AlGaInP epilayers. Due to the high thermal conductivity (160 W/m-K) of 10(4)-mu m-thick CIC, the high performances of the packaged LEDs are obtained. They present a low red shift phenomenon (from 623 to 642 nm for 100 mA to 1 A) and a high output power 212 mW at 800 mA. The CIC substrate can be extended to fabricate high-efficiency thin film LEDs with conventional vertical electrodes. (c) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
URI: http://dx.doi.org/10.1364/OE.27.00A397
http://hdl.handle.net/11536/151913
ISSN: 1094-4087
DOI: 10.1364/OE.27.00A397
期刊: OPTICS EXPRESS
Volume: 27
Issue: 8
起始頁: 0
結束頁: 0
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