標題: High-performance n-channel polycrystalline germanium thin-film transistors via continuous-wave laser crystallization and green nanosecond laser annealing for source and drain dopant activation
作者: Li, Yi-Shao
Liang, Hao-Hsiang
Wu, Chun-Yi
Huang, Wen-Hsien
Luo, Jun-Dao
Chuang, Kai-Chi
Li, Wei-Shuo
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-六月-2019
摘要: High-quality polycrystalline germanium (poly-Ge) films have been successfully fabricated via the continuous-wave laser crystallization (CLC) process. Grain sizes as large as 0.8 mu m were obtained for the poly-Ge films by CLC at 5.7 W. Furthermore, the source and drain dopants could then be effectively activated by green nanosecond laser annealing (GNS-LA). Consequently, n-channel CLC Ge thin-film transistors (TFTs) with a high field-effect mobility of 576 cm(2) V-1 s(-1) were demonstrated for an effective channel width of 0.86 mu m and a channel length of 0.5 mu m. It is shown that CLC combined with GNS-LA is effective for attaining high-performance n-channel poly-Ge TFTs. (c) 2019 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/1347-4065/ab049a
http://hdl.handle.net/11536/152149
ISSN: 0021-4922
DOI: 10.7567/1347-4065/ab049a
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 58
起始頁: 0
結束頁: 0
顯示於類別:期刊論文