標題: The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories
作者: Chiu, Yung-Yueh
Lin, Cheng-Han
Yang, Jhih-Siang
Yang, Bo-Jun
Aoki, Minoru
Takeshita, Toshiaki
Yano, Masaru
Shirota, Riichiro
電機工程學系
Department of Electrical and Computer Engineering
公開日期: 1-Aug-2019
摘要: This paper, for the first time, presents a comprehensive study into the effect of hydrogen concentration in the forming gas on the reliability of NAND Flash memories. It is newly observed that a higher hydrogen concentration leads to broaden the threshold-voltage (V-T) distribution after programming. This suggests that a higher hydrogen concentration makes a larger amount of ionized hydrogens (H+) exist in the shallow trench isolation (STI), which results in the fluctuation of the Fowler-Nordheim tunneling current during programming. It is also found that the V-T distribution width difference between higher and lower hydrogen concentration turns out to be smaller after the program/erase cycling. This could be explained by the neutralization of H+ due to the capture of the tunneling electrons at the STI edge. On the other hand, the higher hydrogen concentration proves to be able to provide better retention characteristics. Thus, the programming and retention characteristics are the tradeoff relationship. Therefore, optimization of the hydrogen concentration is crucial for the NAND Flash process integration. (C) 2019 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/1347-4065/ab2942
http://hdl.handle.net/11536/152165
ISSN: 0021-4922
DOI: 10.7567/1347-4065/ab2942
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 58
Issue: 8
起始頁: 0
結束頁: 0
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