完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Wen-Chieh | en_US |
dc.contributor.author | Ker, Ming-Dou | en_US |
dc.date.accessioned | 2019-08-02T02:18:28Z | - |
dc.date.available | 2019-08-02T02:18:28Z | - |
dc.date.issued | 2019-06-01 | en_US |
dc.identifier.issn | 1530-4388 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TDMR.2019.2910351 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/152303 | - |
dc.description.abstract | A new on-chip transient detection circuit with superior area efficiency is proposed against the system malfunction resulting from system-level electrostatic discharge ( ESD) events. With dual-latched structure, a better area efficiency can be achieved by the reduced time constant inquiry. The proposed transient detection circuit with a silicon area of 40 mu m x 60 mu m has been fabricated in a 0.18-mu m CMOS process with 1.8-V devices. The detection sensitivity has been successfully verified under +/- 200 V system-level ESD tests. To achieve the "Class B" specification of IEC 61000-4-2 standard, the proposed transient detection circuit serves as a safety guard for the system. Through the hardware/firmware co-design, the auto-recovery procedure can be activated by the proposed transient detection circuit sending out a warning signal. With the proposed transient detection circuit co-works with the system program, the immunity level of microelectronic products against the electromagnetic compatibility (EMC) of ESD events can be effectively improved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Electrostatic discharge (ESD) | en_US |
dc.subject | system-level ESD | en_US |
dc.subject | electromagnetic compatibility (EMC) | en_US |
dc.subject | transient detection circuit | en_US |
dc.title | Area-Efficient On-Chip Transient Detection Circuit for System-Level ESD Protection Against Transient-Induced Malfunction | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TDMR.2019.2910351 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | en_US |
dc.citation.volume | 19 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 363 | en_US |
dc.citation.epage | 369 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000471007800017 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |