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dc.contributor.authorChen, Wen-Chiehen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2019-08-02T02:18:28Z-
dc.date.available2019-08-02T02:18:28Z-
dc.date.issued2019-06-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2019.2910351en_US
dc.identifier.urihttp://hdl.handle.net/11536/152303-
dc.description.abstractA new on-chip transient detection circuit with superior area efficiency is proposed against the system malfunction resulting from system-level electrostatic discharge ( ESD) events. With dual-latched structure, a better area efficiency can be achieved by the reduced time constant inquiry. The proposed transient detection circuit with a silicon area of 40 mu m x 60 mu m has been fabricated in a 0.18-mu m CMOS process with 1.8-V devices. The detection sensitivity has been successfully verified under +/- 200 V system-level ESD tests. To achieve the "Class B" specification of IEC 61000-4-2 standard, the proposed transient detection circuit serves as a safety guard for the system. Through the hardware/firmware co-design, the auto-recovery procedure can be activated by the proposed transient detection circuit sending out a warning signal. With the proposed transient detection circuit co-works with the system program, the immunity level of microelectronic products against the electromagnetic compatibility (EMC) of ESD events can be effectively improved.en_US
dc.language.isoen_USen_US
dc.subjectElectrostatic discharge (ESD)en_US
dc.subjectsystem-level ESDen_US
dc.subjectelectromagnetic compatibility (EMC)en_US
dc.subjecttransient detection circuiten_US
dc.titleArea-Efficient On-Chip Transient Detection Circuit for System-Level ESD Protection Against Transient-Induced Malfunctionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TDMR.2019.2910351en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume19en_US
dc.citation.issue2en_US
dc.citation.spage363en_US
dc.citation.epage369en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000471007800017en_US
dc.citation.woscount0en_US
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