標題: Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors
作者: Cheng, Chun-Hu
Lin, Ming-Huei
Chen, Hsin-Yu
Fan, Chia-Chi
Liu, Chien
Hsu, Hsiao-Hsuan
Chang, Chun-Yen
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: ferroelectric;hafnium zirconium oxide;negative capacitance;transistors
公開日期: 1-May-2019
摘要: In this work, it is demonstrated that the negative capacitance effect of ferroelectric Hf1-xZrxO2 transistor is highly correlated with Zr doping concentration. A steep subthreshold swing of 40mV/decade, a low off-state leakage current of 190fAm(-1), and a large on/off current ratio of >10(7) can be simultaneously achieved in optimized negative capacitance Hf1-xZrxO2 transistor. Besides, the Zr diffusion issue and non-ferroelectric phases significantly affect the multi-domain switching of polycrystalline Hf1-xZrxO2. Therefore, an appropriate amount of Zr substitution is more favorable for both boosting ferroelectric and implementing the negative capacitance switch.
URI: http://dx.doi.org/10.1002/pssr.201800573
http://hdl.handle.net/11536/152318
ISSN: 1862-6254
DOI: 10.1002/pssr.201800573
期刊: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume: 13
Issue: 5
起始頁: 0
結束頁: 0
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