完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiu, Chi-Weien_US
dc.contributor.authorChen, Yi-Lunen_US
dc.contributor.authorLiao, Pei-Chunen_US
dc.contributor.authorLin, Shiau-Pinen_US
dc.contributor.authorWang, Ting-Weien_US
dc.contributor.authorChung, Ming-Jieen_US
dc.contributor.authorChen, Po-Hungen_US
dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorWu, Chung-Yuen_US
dc.date.accessioned2019-08-02T02:18:31Z-
dc.date.available2019-08-02T02:18:31Z-
dc.date.issued2019-05-01en_US
dc.identifier.issn1549-7747en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSII.2019.2909813en_US
dc.identifier.urihttp://hdl.handle.net/11536/152336-
dc.description.abstractThis brief presents a high-efficiency battery management unit combining a single-inductor dual-output (SIDO) buck converter with two charge pumps (CPs) to provide three voltage levels (6 V, -6 V, and 2 V) for neuron stimulators in implantable medical devices. The stacked power stage in the buck converter mitigates the voltage stress issue in the power stage to manage 3.2-4.8 V battery voltage. By cascading a buck converter and CPs, the voltage across the CP power stage is reduced to generate 6 V and -6 V high voltage outputs without using high voltage devices. As a result, the proposed battery management could provide 6 V, -6 V, and 2 V output voltages from 3.2 to 4.8 V input voltage using a 180-nm standard CMOS process. The measurement results demonstrate that the proposed battery management achieved a peak efficiency of 82.9% with an available input voltage of 3.2-4.8 V.en_US
dc.language.isoen_USen_US
dc.subjectHigh voltage generatoren_US
dc.subjectBMUen_US
dc.subjectbuck converteren_US
dc.subjectcharge pumpen_US
dc.subjectoverstressen_US
dc.subjecttransistors stackingen_US
dc.subjectsoft start-upen_US
dc.titleAn 82.9%-Efficiency Triple-Output Battery Management Unit for Implantable Neuron Stimulator in 180-nm Standard CMOSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TCSII.2019.2909813en_US
dc.identifier.journalIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFSen_US
dc.citation.volume66en_US
dc.citation.issue5en_US
dc.citation.spage788en_US
dc.citation.epage792en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000466944200016en_US
dc.citation.woscount0en_US
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