Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics

標題:	Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics
作者:	Liao, Chia-Chun Lin, Min-Chen Liu, Shao-Xuan Chao, Tien-Sheng 電子物理學系 Department of Electrophysics
關鍵字:	Metal-induced lateral crystallization (MILC);strain;thin-film transistors (TFTs)
公開日期:	1-二月-2012
摘要:	This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.
URI:	http://dx.doi.org/10.1109/LED.2011.2174609 http://hdl.handle.net/11536/15237
ISSN:	0741-3106
DOI:	10.1109/LED.2011.2174609
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	33
Issue:	2
起始頁:	239
結束頁:	241
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。