標題: ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
作者: Simanjuntak, Firman Mangasa
Chandrasekaran, Sridhar
Lin, Chun-Chieh
Tseng, Tseung-Yuen
電子工程學系及電子研究所
電機工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Electrical and Computer Engineering
公開日期: 1-五月-2019
摘要: Hydrogen peroxide treatment induces the phase transformation of hexagonal ZnO to cubic ZnO2 on the surface of the ZnO switching memory film; this oxidation process effectively reduces the concentration of n-type donor defects (oxygen vacancies and zinc interstitials) in the switching film. The chemically oxidized ZnO2 layer not only lowers the operation current of the device but also can serve as an oxygen bank to improve the endurance of the memristor. The oxidation reaction of peroxide treatment can be easily controlled to achieve an analog behavior with good switching uniformity. The analog memristor device is able to perform two-bit per cell and synaptic operations. Based on the experimental synaptic data, an image processing of 7 x 9 pixels using a simulated artificial neural network comprises 63 synapses is evaluated to mimic the visual cortex function of the brain.
URI: http://dx.doi.org/10.1063/1.5092991
http://hdl.handle.net/11536/152417
ISSN: 2166-532X
DOI: 10.1063/1.5092991
期刊: APL MATERIALS
Volume: 7
Issue: 5
起始頁: 0
結束頁: 0
顯示於類別:期刊論文