標題: Optical Properties of Patterned InN in Photodetection Devices
作者: Hsu, Lung-Hsing
Cheng, Yuh-Jen
Yu, Peichen
Kuo, Hao-Chung
Lin, Chien-Chung
光電系統研究所
照明與能源光電研究所
光電工程研究所
Institute of Photonic System
Institute of Lighting and Energy Photonics
Institute of EO Enginerring
關鍵字: Infrared;Indium compounds;photodetection devices;nanostructured materials
公開日期: 1-一月-2018
摘要: InN selective-area-growth on patterned GaN templates was employed by nano-imprint lithography and LP-MOCVD epitaxy. ITO rods were deposited by oblique-angle electron beam evaporation. The X-ray diffraction patterns provide the hexagonal orientation of patterned InN crystals. The broad band signal and peak energy blue-shift phenomenon due to higher Fermi-level to acceptor emission were investigated by photoluminescence (PL). The Raman-shifts characterized the high-quality patterned InN growth. InN nanostructures/ITO rods enhanced broadband and angle-independent anti-reflection. It was demonstrated with near-infrared response by a tunable laser illumination (1470 similar to 1580nm), and the portion photocurrent (920 nm long pass) exhibits 33% measured via AM1.5G solar simulated spectra.
URI: http://hdl.handle.net/11536/152449
ISBN: 978-1-5386-8529-7
ISSN: 2159-2330
期刊: 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)
起始頁: 1806
結束頁: 1809
顯示於類別:會議論文