標題: Application of Porous a-Si:H Passivation Layer Deposited Using Si2H6 Precursor in Silicon Heterojunction Solar Cells
作者: Chen, Po-Wei
Chen, Pei-Ling
Hsu, Hung-Jung
Matsui, Takuya
Sai, Hitoshi
Tsai, Chuang-Chuang
Matsubara, Koji
光電工程學系
Department of Photonics
關鍵字: Si2H6 precursor;passivation layer;porous aSi:II;carrier lifetime;silicon heterojunction photovoltaic
公開日期: 1-Jan-2018
摘要: The improved silicon heterojunction solar cell efficiency by employing porous a-Si:H passivation layer deposited using Si2H6 precursor is presented. By introducing Si2H6 precursor into the commonly-used SiH4 plasma, it is demonstrated that the porosity of a-Si:H passivation layer can be increased significantly. A stack of the porous a-Si:H passivation layer with overlying dense a-Si:H capping layer preserves excellent interface passivation even after doped layer deposition. In the finished solar cell, improvements in Voc from 0.691 to 0.714 V and efficiency from 20.0 to 21.0% were obtained as a consequence of using porous a-Si:H passivation layer deposited under high Si2H6 concentration.
URI: http://hdl.handle.net/11536/152452
ISBN: 978-1-5386-8529-7
ISSN: 2159-2330
期刊: 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)
起始頁: 1982
結束頁: 1985
Appears in Collections:Conferences Paper