標題: Switching and synaptic characteristics of AZO/ZnO/ITO valence change memory device
作者: Simanjuntak, F. M.
Chandrasekaran, S.
Gapsari, F.
Tseng, T. Y.
材料科學與工程學系
電子工程學系及電子研究所
電機工程學系
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
Department of Electrical and Computer Engineering
公開日期: 1-Jan-2019
摘要: This paper reports the resistive switching and synaptic capability of AZO/ZnO/ITO transparent and flexiblevalence change memory device structure. The device performs stable endurance for more than 50 cycles with sufficient ON/OFF ratio of one order of magnitude; no intermediate state (data error) is observed during the cycle-to-cycle test. By exploiting the analog switching characteristic of the device and employing identical pulses to the top electrode, a synaptic behavior can be achieved. A low programming voltage of 1.5V is used to modulate the conductance during potentiation and depression which indicate that the device is a logic-compatible. The conduction mechanism during the switching processand the device performance is discussed.
URI: http://dx.doi.org/10.1088/1757-899X/494/1/012027
http://hdl.handle.net/11536/152487
ISSN: 1757-8981
DOI: 10.1088/1757-899X/494/1/012027
期刊: INTERNATIONAL CONFERENCE ON MECHANICAL ENGINEERING RESEARCH AND APPLICATION
Volume: 494
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper