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dc.contributor.authorChen, Bo-Yaen_US
dc.contributor.authorChen, Bo-Enen_US
dc.contributor.authorLai, Bo-Chengen_US
dc.date.accessioned2019-09-02T07:45:41Z-
dc.date.available2019-09-02T07:45:41Z-
dc.date.issued2019-01-01en_US
dc.identifier.isbn978-1-7281-0655-7en_US
dc.identifier.issn2474-2724en_US
dc.identifier.urihttp://hdl.handle.net/11536/152563-
dc.description.abstractThis paper proposes REMAP+, a novel design that enables efficient write scheme for algorithmic multi-ported memory, and attains better performance with smaller area. REMAP+ applies the banking structure of memory design and implements the remap table with SRAM cells instead of costly registers. In the remap table, REMAP+ only keeps the most significant bit of write addresses to more efficiently utilize the space in the table. The hash write controller is simplified with the first fit algorithm to handle write conflict with shorter latency. REMAP+ is implemented in a pipeline scheme to further increase the processing throughput. For a 3W1R memory with 16K depth, REMAP+ has attained 22% shorter access latency and 31.3% smaller area when compared with the previous design.en_US
dc.language.isoen_USen_US
dc.titleEfficient Write Scheme for Algorithm-based Multi-ported Memoryen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2019 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000480385400049en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper