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dc.contributor.authorPeng, Ching-Weien_US
dc.contributor.authorChang, Yuan-Chiaen_US
dc.contributor.authorCheng, Ming-Weien_US
dc.contributor.authorHsu, Yungen_US
dc.contributor.authorWei, Liang-Yuen_US
dc.contributor.authorChow, Chi-Waien_US
dc.contributor.authorYeh, Chien-Hungen_US
dc.date.accessioned2019-09-02T07:45:42Z-
dc.date.available2019-09-02T07:45:42Z-
dc.date.issued2018-01-01en_US
dc.identifier.isbn978-1-5386-9145-8en_US
dc.identifier.issn2166-8884en_US
dc.identifier.urihttp://hdl.handle.net/11536/152571-
dc.description.abstractWe propose an silicon-on-insulator (SOI) based polarization-exchanger using bi-level-tapers and asymmetric-directional-couplers. Signal from transverse-electric (TE) polarization can be switched to transverse-magnetic (TM) polarization and vice versa. Crosstalk <= -25dB is observed in 40nm wavelength window.en_US
dc.language.isoen_USen_US
dc.titleSilicon-on-Insulator (SOI) based Polarization-Exchanger using Asymmetric Directional Coupleren_US
dc.typeProceedings Paperen_US
dc.identifier.journal23RD OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC2018)en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000477695500210en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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