標題: Characteristics of atomic layer deposition-grown zinc oxide thin film with and without aluminum
作者: Tseng, Ming-Chun
Wuu, Dong-Sing
Chen, Chi-Lu
Lee, Hsin-Ying
Chien, Cheng-Yu
Liu, Po-Liang
Horng, Ray-Hua
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
關鍵字: Aluminum-doped zinc oxide;Zinc oxide;Atomic layer deposition
公開日期: 15-Oct-2019
摘要: Zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films were deposited on glass substrates using atomic layer deposition. The Al composition of the AZO thin films was varied by controlling the Zn:Al cycle ratios. The ZnO and AZO thin films were characterized using atomic force microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and optical measurements. The electrical properties of the ZnO and AZO thin films were influenced by the Zn:Al cycle ratios. The resistivity of the AZO thin film decreased significantly, whereas the carrier concentration increased with the Al composition. As the Zn:Al cycle ratio increased, the AZO thin film achieved an average transmittance of > 85%.
URI: http://dx.doi.org/10.1016/j.apsusc.2019.06.055
http://hdl.handle.net/11536/152580
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2019.06.055
期刊: APPLIED SURFACE SCIENCE
Volume: 491
起始頁: 535
結束頁: 543
Appears in Collections:Articles