標題: Negative threshold voltage shift for LTPS TFTs under x-ray irradiation and gate bias
作者: Tai, Ya-Hsiang
Yeh, Shan
Chan, Po-Chun
Li, Yi-Shen
Huang, Shih-Hsuan
Tu, Cheng-Che
Chang, Ting-Chang
電機學院
光電工程學系
College of Electrical and Computer Engineering
Department of Photonics
關鍵字: low-temperature polycrystalline silicon (LTPS);thin-film transistor (TFT);X-ray;gate bias;gate insulator
公開日期: 1-Sep-2019
摘要: In this paper, the behavior of the low-temperature polycrystalline-silicon (LTPS) thin film transistors (TFTs) during x-ray irradiation and gate bias voltage (V-G) simultaneously is analyzed. Both n-type and p-type LTPS TFTs show negative shifts of threshold voltage under same dose of x-ray irradiation, regardless of the V-G polarity, while the field effect mobility of n-type LTPS TFT keeps fairly well. The degradation of subthreshold swing is attributed to the interface states, which can be repaired by 300 degrees C annealing. A model is proposed to explain the results for different V-G, and verified by changing the thickness of the gate oxide. More irradiation-induced holes are trapped by the far defects owing to the electric field. This study can be helpful to develop more stable devices or circuits for the application of x-ray image sensors.
URI: http://dx.doi.org/10.1088/1361-6641/ab3157
http://hdl.handle.net/11536/152635
ISSN: 0268-1242
DOI: 10.1088/1361-6641/ab3157
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 34
Issue: 9
起始頁: 0
結束頁: 0
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