標題: Tunable Ge content and thickness in hemispherical-shell shaped SiGe recess channels created by proximal Ge nanospheres
作者: Chen, C. T.
Peng, K. P.
George, T.
Lin, H. C.
Li, Pei-Wen
交大名義發表
National Chiao Tung University
公開日期: 1-May-2019
摘要: We report the novel tunability of Ge content, thickness, and even curvature/shape in self-aligned, hemispherical-shell shaped SiGe recess channels created in Si substrates by Ge nanospheres that are proximally located to these nanoshells. The hemispherical recess SiGe nanoshells arise from the migration of Ge interstitials through the intervening oxide layer between the Ge nanospheres and the Si substrate, and their Ge content, thickness, and curvatures exhibit a monotonic dependence on the depth of penetration of the Ge nanospheres into the Si substrate. Following a unique "explosion" phenomenon in which the Ge nanosphere breaks up into multiple nanocrystallites, both the Ge content and thickness of the SiGe nanoshells are significantly decreased by reverse migration of Ge interstitials from the SiGe nanoshells to the Ge nanocrystallites. (c) 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
URI: http://dx.doi.org/10.1063/1.5088554
http://hdl.handle.net/11536/152677
ISSN: 2158-3226
DOI: 10.1063/1.5088554
期刊: AIP ADVANCES
Volume: 9
Issue: 5
起始頁: 0
結束頁: 0
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