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dc.contributor.authorChen, Sung-Wen Huangen_US
dc.contributor.authorWang, Hao-Yuen_US
dc.contributor.authorHu, Congen_US
dc.contributor.authorChen, Yongen_US
dc.contributor.authorWang, Haoen_US
dc.contributor.authorWang, Jialeen_US
dc.contributor.authorHe, Weien_US
dc.contributor.authorSun, Xiaojuanen_US
dc.contributor.authorChiu, Hsien-Chinen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Weicongen_US
dc.contributor.authorXu, Keen_US
dc.contributor.authorLi, Dabingen_US
dc.contributor.authorLiu, Xinkeen_US
dc.date.accessioned2019-09-02T07:46:20Z-
dc.date.available2019-09-02T07:46:20Z-
dc.date.issued2019-10-05en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2019.07.021en_US
dc.identifier.urihttp://hdl.handle.net/11536/152709-
dc.description.abstractWe report vertical GaN-on-GaN PIN diodes with a record high figure-of-merit (V-BR(2)/R-on) of 29.7 GW/cm(2) on free-standing GaN wafer using a complementary metal-oxide-semiconductor (CMOS) compatible contact materials. Due to the low substrate resistivity, low contact resistance, and high quality of GaN drift layer, a low on-state resistance R(on )of 0.31 m Omega cm(2) is obtained. With integrating of the metal filed plate structure in the vertical device, the peak electrical field along the GaN mesa edge can be significantly reduced, thus leading to a high breakdown voltage V-BR of 3.04 kV. The vertical GaN-on-GaN PIN diodes in this work show turn-on voltage V-on of similar to 3.4 V, on/off current ratio of similar to 1.3 x 10(7), and ideal factor n of similar to 2.2. According to the reverse switching measurement, the reverse recovery time T-rr. (reverse recovery charge Q(rr)) is 22.8 ns (4.8 nC) and 24.0 ns (5.4 nC), respectively, under a testing temperature of 300 K and 500 K. (C) 2019 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectFree standing gallium nitride (GaN)en_US
dc.subjectGaN-On-GaNen_US
dc.subjectPower PIN diodeen_US
dc.titleVertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2019.07.021en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume804en_US
dc.citation.spage435en_US
dc.citation.epage440en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000478575100050en_US
dc.citation.woscount0en_US
Appears in Collections:Articles