标题: | Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method |
作者: | Chen, Sung-Wen Huang Wang, Hao-Yu Hu, Cong Chen, Yong Wang, Hao Wang, Jiale He, Wei Sun, Xiaojuan Chiu, Hsien-Chin Kuo, Hao-Chung Wang, Weicong Xu, Ke Li, Dabing Liu, Xinke 光电工程学系 光电工程研究所 Department of Photonics Institute of EO Enginerring |
关键字: | Free standing gallium nitride (GaN);GaN-On-GaN;Power PIN diode |
公开日期: | 5-十月-2019 |
摘要: | We report vertical GaN-on-GaN PIN diodes with a record high figure-of-merit (V-BR(2)/R-on) of 29.7 GW/cm(2) on free-standing GaN wafer using a complementary metal-oxide-semiconductor (CMOS) compatible contact materials. Due to the low substrate resistivity, low contact resistance, and high quality of GaN drift layer, a low on-state resistance R(on )of 0.31 m Omega cm(2) is obtained. With integrating of the metal filed plate structure in the vertical device, the peak electrical field along the GaN mesa edge can be significantly reduced, thus leading to a high breakdown voltage V-BR of 3.04 kV. The vertical GaN-on-GaN PIN diodes in this work show turn-on voltage V-on of similar to 3.4 V, on/off current ratio of similar to 1.3 x 10(7), and ideal factor n of similar to 2.2. According to the reverse switching measurement, the reverse recovery time T-rr. (reverse recovery charge Q(rr)) is 22.8 ns (4.8 nC) and 24.0 ns (5.4 nC), respectively, under a testing temperature of 300 K and 500 K. (C) 2019 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.jallcom.2019.07.021 http://hdl.handle.net/11536/152709 |
ISSN: | 0925-8388 |
DOI: | 10.1016/j.jallcom.2019.07.021 |
期刊: | JOURNAL OF ALLOYS AND COMPOUNDS |
Volume: | 804 |
起始页: | 435 |
结束页: | 440 |
显示于类别: | Articles |