標題: Improving linearity by introducing Al in HfO2 as a memristor synapse device
作者: Chandrasekaran, Sridhar
Simanjuntak, Firman Mangasa
Saminathan, R.
Panda, Debashis
Tseng, Tseung-Yuen
電子工程學系及電子研究所
電機工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Electrical and Computer Engineering
關鍵字: artificial synaptic;neuromorphic;resistive switching;memristor
公開日期: 1-十一月-2019
摘要: Artificial synapse having good linearity is crucial to achieve an efficient learning process in neuromorphic computing. It is found that the synaptic linearity can be enhanced by engineering the doping region across the switching layer. The nonlinearity of potentiation and depression of the pure device is 36% and 91%, respectively; meanwhile, the nonlinearity after doping can be suppressed to be 22% (potentiation) and 60% (depression). Henceforth, the learning accuracy of the doped device is 91% with only 13 iterations; meanwhile, the pure device is 78%. A detailed conduction mechanism to understand this phenomenon is proposed.
URI: http://dx.doi.org/10.1088/1361-6528/ab3480
http://hdl.handle.net/11536/152807
ISSN: 0957-4484
DOI: 10.1088/1361-6528/ab3480
期刊: NANOTECHNOLOGY
Volume: 30
Issue: 44
起始頁: 0
結束頁: 0
顯示於類別:期刊論文