標題: | Improving linearity by introducing Al in HfO2 as a memristor synapse device |
作者: | Chandrasekaran, Sridhar Simanjuntak, Firman Mangasa Saminathan, R. Panda, Debashis Tseng, Tseung-Yuen 電子工程學系及電子研究所 電機工程學系 Department of Electronics Engineering and Institute of Electronics Department of Electrical and Computer Engineering |
關鍵字: | artificial synaptic;neuromorphic;resistive switching;memristor |
公開日期: | 1-十一月-2019 |
摘要: | Artificial synapse having good linearity is crucial to achieve an efficient learning process in neuromorphic computing. It is found that the synaptic linearity can be enhanced by engineering the doping region across the switching layer. The nonlinearity of potentiation and depression of the pure device is 36% and 91%, respectively; meanwhile, the nonlinearity after doping can be suppressed to be 22% (potentiation) and 60% (depression). Henceforth, the learning accuracy of the doped device is 91% with only 13 iterations; meanwhile, the pure device is 78%. A detailed conduction mechanism to understand this phenomenon is proposed. |
URI: | http://dx.doi.org/10.1088/1361-6528/ab3480 http://hdl.handle.net/11536/152807 |
ISSN: | 0957-4484 |
DOI: | 10.1088/1361-6528/ab3480 |
期刊: | NANOTECHNOLOGY |
Volume: | 30 |
Issue: | 44 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |