標題: Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using In-Situ ALD Digital O-3 Treatment
作者: Yeh, M. -S.
Luo, G. -L.
Hou, F. -J.
Sung, P. -J.
Wang, C. -J.
Su, C. -J.
Wu, C. -T.
Huang, Y. -C.
Hong, T. -C.
Chao, T. -S.
Chen, B. -Y.
Chen, K. -M.
Wu, Y. -C.
Izawa, M.
Miura, M.
Morimoto, M.
Ishimura, H.
Lee, Y. -J.
Wu, W. -F.
Yeh, W. -K.
電子物理學系
Department of Electrophysics
關鍵字: ALD high-k;in-situ digital ozone treatment (IDOT);CMOS;FinFET;germanium;inverters
公開日期: 1-Jan-2018
摘要: Improved electrical characteristics of CMOS inverters composed of Ge n- and p-finFETs were demonstrated by utilizing newly introduced Ge surface treatments. In-situ digital O-3 treatment in ALD chamber was adopted on the surface of Ge fin sidewall in order to reduce the roughness and etching damages through the GeO desorption mechanism. The treatment effects were checked by AFM and C-V measurements. By combining this treatment with optimized microwave annealing, sub-threshold slope and the I-ON/I-OFF ratio were remarkably improved in both n-finFET and p-finFET, and Ge CMOS inverters with high voltage gain of 50.3 V/V at low V-D = 0.6 V was realized. Finally, simulations on an ideal Ge CMOS inverter were presented.
URI: http://dx.doi.org/10.1109/JEDS.2018.2878929
http://hdl.handle.net/11536/152826
ISSN: 2168-6734
DOI: 10.1109/JEDS.2018.2878929
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 6
Issue: 1
起始頁: 1227
結束頁: 1232
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