標題: Efficiency Improvement of Near-Ultraviolet Nitride-Based Light-Emitting-Diode Prepared on GaN Nano-Rod Arrays by Metalorganic Chemical Vapor Deposition
作者: Kuo, Cheng Huang
Chen, Yu An
Wu, Ji Pu
Chang, Li Chuan
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: Nano-rod arrays;near-ultraviolet;InGaN/GaN;LED
公開日期: 1-Mar-2014
摘要: Near-ultraviolet nitride-based light-emitting diodes (LEDs) were prepared on GaN nanorod arrays (NRAs). Transmission electron microscopy results show that the NRAs partially block threading dislocation propagation from the GaN template. Compared with conventional LEDS, the output power of the prepared LED using GaN NRAs with an injection current of 20 mA was enhanced by a factor of 1.67.
URI: http://dx.doi.org/10.1109/JQE.2013.2297413
http://hdl.handle.net/11536/152854
ISSN: 0018-9197
DOI: 10.1109/JQE.2013.2297413
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 50
Issue: 3
起始頁: 129
結束頁: 132
Appears in Collections:Articles