標題: | A W-Band 6.8 mW Low-Noise Amplifier in 90 nm CMOS Technology Using Noise Measure |
作者: | Yeh, Po-Chen Kuo, Chien-Nan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | CMOS;LNA;W-Band;millimeter-wave;noise measure;low-power |
公開日期: | 1-一月-2019 |
摘要: | A W-band low-noise amplifier consisting of seven common-source transistor stages is designed using noise measure as the figure of merit for circuit optimization. Fabricated in 90 nm CMOS technology, the die size is 0.38 mm(2), while the core active area only 0.1 mm(2). The circuit gives peak power gain of 21.5 dB at 90 GHz and noise figure of 8.3 dB, with dc power consumption of only 6.8 mW. |
URI: | http://hdl.handle.net/11536/152968 |
ISBN: | 978-1-7281-0397-6 |
ISSN: | 0271-4302 |
期刊: | 2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 會議論文 |