標題: A W-Band 6.8 mW Low-Noise Amplifier in 90 nm CMOS Technology Using Noise Measure
作者: Yeh, Po-Chen
Kuo, Chien-Nan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CMOS;LNA;W-Band;millimeter-wave;noise measure;low-power
公開日期: 1-Jan-2019
摘要: A W-band low-noise amplifier consisting of seven common-source transistor stages is designed using noise measure as the figure of merit for circuit optimization. Fabricated in 90 nm CMOS technology, the die size is 0.38 mm(2), while the core active area only 0.1 mm(2). The circuit gives peak power gain of 21.5 dB at 90 GHz and noise figure of 8.3 dB, with dc power consumption of only 6.8 mW.
URI: http://hdl.handle.net/11536/152968
ISBN: 978-1-7281-0397-6
ISSN: 0271-4302
期刊: 2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper