完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, Huei-Min | en_US |
dc.contributor.author | Kuo, Chin-Chia | en_US |
dc.contributor.author | Chang, Chiao-Yun | en_US |
dc.contributor.author | Lin, Yuan-Ting | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.contributor.author | Tu, Li-Wei | en_US |
dc.contributor.author | Hsieh, Wen-Feng | en_US |
dc.date.accessioned | 2014-12-08T15:21:32Z | - |
dc.date.available | 2014-12-08T15:21:32Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/15299 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/2.080203jes | en_US |
dc.description.abstract | We report on growth and characteristics of a-plane GaN/ZnO/GaN epitaxial structures, which can be applied to various optoelectronic devices. The unique optical transitions intrinsic to heterovalent interfaces were found and analyzed. Clear carrier localization effect in the GaN/ZnO heterointerface is observed from the S-shaped energy shift with increasing temperature in the temperature-dependent photoluminescence measurement. The carrier localization also results in strong luminescent intensity and dominates the emission spectrum at room temperature. In addition, the acceptor level originated from the Zn out-diffusion from the ZnO layer is observed in the low temperature photoluminescence spectra, and its binding energy is estimated to be about 0.311 eV. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.080203jes] All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Growth and Characteristics of a-Plane GaN on ZnO Heterostructure | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.080203jes | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 159 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | H290 | en_US |
dc.citation.epage | H292 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000299292100075 | - |
dc.citation.woscount | 4 | - |
顯示於類別: | 期刊論文 |