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dc.contributor.authorHuang, Huei-Minen_US
dc.contributor.authorKuo, Chin-Chiaen_US
dc.contributor.authorChang, Chiao-Yunen_US
dc.contributor.authorLin, Yuan-Tingen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorTu, Li-Weien_US
dc.contributor.authorHsieh, Wen-Fengen_US
dc.date.accessioned2014-12-08T15:21:32Z-
dc.date.available2014-12-08T15:21:32Z-
dc.date.issued2012en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/15299-
dc.identifier.urihttp://dx.doi.org/10.1149/2.080203jesen_US
dc.description.abstractWe report on growth and characteristics of a-plane GaN/ZnO/GaN epitaxial structures, which can be applied to various optoelectronic devices. The unique optical transitions intrinsic to heterovalent interfaces were found and analyzed. Clear carrier localization effect in the GaN/ZnO heterointerface is observed from the S-shaped energy shift with increasing temperature in the temperature-dependent photoluminescence measurement. The carrier localization also results in strong luminescent intensity and dominates the emission spectrum at room temperature. In addition, the acceptor level originated from the Zn out-diffusion from the ZnO layer is observed in the low temperature photoluminescence spectra, and its binding energy is estimated to be about 0.311 eV. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.080203jes] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleGrowth and Characteristics of a-Plane GaN on ZnO Heterostructureen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.080203jesen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume159en_US
dc.citation.issue3en_US
dc.citation.spageH290en_US
dc.citation.epageH292en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000299292100075-
dc.citation.woscount4-
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