標題: | Experimentally Determining the Top and Edge Contact Resistivities of Two-Step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement |
作者: | Chung, Yun-Yan Li, Chi-Feng Lin, Chao-Ting Ho, Yen-Teng Chien, Chao-Hsin 電子工程學系及電子研究所 國際半導體學院 Department of Electronics Engineering and Institute of Electronics International College of Semiconductor Technology |
關鍵字: | TLM;metal-2D material contact;MoS2;TMD;edge contact resistivity;Nb-doped;two-step sulfurization |
公開日期: | 1-Oct-2019 |
摘要: | This study determined the top (vertical) and edge (horizontal) resistivities of metal-MoS2 contact based on the experimental results obtained using the transmission line measurement structure. A novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on a sapphire substrate. The edge contact resistivity, rho(C_edge), was almost two orders of magnitude lower than the top contact resistivity, rho(C_top). Our findings highlight a simple and effective method to accurately determine the edge and top contact resistances of a metal-two-dimensional material contact. |
URI: | http://dx.doi.org/10.1109/LED.2019.2935538 http://hdl.handle.net/11536/153001 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2019.2935538 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 40 |
Issue: | 10 |
起始頁: | 1662 |
結束頁: | 1665 |
Appears in Collections: | Articles |