標題: Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode
作者: Huang, Wei-Chen
Huang, Shin-Ping
Chen, Po-Hsun
Chen, Min-Chen
Chang, Ting-Chang
Shih, Chih-Cheng
Tseng, Yi-Ting
Zheng, Hao-Xuan
Tan, Yung-Fang
Wu, Chung-Wei
Yeh, Yuh-Suan
Ma, Xiao-Hua
Hao, Yue
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: resistance random access memory (RRAM);UV-light illumination;forming process;indium-tin-oxide (ITO)
公開日期: 9-Jan-2020
摘要: Traditionally, metal is used for the top electrode (TE) in HfO2-based resistance random access memory. When transparent indium-tin-oxide (ITO) is used as the TE, different forming processes, including lower forming voltages and higher forming currents, are exhibited. This work investigates the forming process with such a transparent TE under UV illumination. In addition, different TE thicknesses and device cell sizes are also investigated to confirm the results. Finally, a possible conduction model is provided to explain the mechanisms under UV-light illumination for the transparent TE during the forming process.
URI: http://dx.doi.org/10.1088/1361-6463/ab467e
http://hdl.handle.net/11536/153194
ISSN: 0022-3727
DOI: 10.1088/1361-6463/ab467e
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 53
Issue: 2
起始頁: 0
結束頁: 0
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